Polishing method and polishing apparatus

ABSTRACT

A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.15/697,047 filed on Sep. 6, 2017, which is a divisional of U.S.application Ser. No. 14/465,792 filed on Aug. 21, 2014, which claims thepriority and the benefit of Japanese Patent Application No. 2013-175471filed in Japan on Aug. 27, 2013, the entire contents of which areincorporated herein by this reference.

BACKGROUND

In recent years, high integration and high density in semiconductordevice demands smaller and smaller wiring patterns or interconnectionsand also more and more interconnection layers. Multilayerinterconnections in smaller circuits result in greater steps whichreflect surface irregularities on lower interconnection layers. Anincrease in the number of interconnection layers makes film coatingperformance (step coverage) poor over stepped configurations of thinfilms. Therefore, better multilayer interconnections need to have theimproved step coverage and proper surface planarization. Further, sincethe depth of focus of a photolithographic optical system is smaller withminiaturization of a photolithographic process, a surface of thesemiconductor device needs to be planarized such that irregular steps onthe surface of the semiconductor device will fall within the depth offocus.

Thus, in a manufacturing process of a semiconductor device, itincreasingly becomes important to planarize a surface of thesemiconductor device. One of the most important planarizing technologiesis chemical mechanical polishing (CMP). In the chemical mechanicalpolishing, while a polishing liquid (slurry) containing abrasiveparticles such as silica (SiO₂) or ceria (CeO₂) therein is supplied ontoa polishing pad, a substrate such as a semiconductor wafer is broughtinto sliding contact with the polishing pad and polished using thepolishing apparatus.

CMP (Chemical Mechanical Polishing) apparatus is used in a process ofpolishing a surface of a substrate in a semiconductor devicefabrication. The CMP apparatus is designed to hold and rotate thesubstrate by a top ring and press the substrate against a polishing padon a rotating polishing table to polish the surface of the substrate.During polishing, a polishing liquid (slurry) is supplied onto thepolishing pad, so that the surface of the substrate is planarized by achemical action of the polishing liquid and a mechanical action of theabrasive particles contained in the polishing liquid.

A polishing rate of the substrate depends not only on a polishing loadon the substrate against the polishing pad, but also on a surfacetemperature of the polishing pad. This is because the chemical action ofthe polishing liquid on the substrate depends on the temperature. Thus,it is important for the semiconductor device fabrication to maintain anoptimum surface temperature of the polishing pad during polishing of thesubstrate in order to increase the polishing rate and keep the polishingrate constant.

Therefore, the present applicant has proposed in Japanese Laid-OpenPatent Publication No. 2012-176449 a polishing apparatus which has a padtemperature adjustment mechanism for adjusting a surface temperature ofa polishing pad by supplying a temperature-adjusted liquid to a padcontact member that is brought into contact with the surface of thepolishing pad.

Because of special importance placed on an increase in the polishingrate, the pad contact member proposed in Japanese Laid-Open PatentPublication No. 2012-176449 is designed to have the largest possiblecontact area under layout restrictions in order to quickly raise thesurface temperature of the polishing pad to a target temperature.Specifically, the pad contact member extends, in the radial direction ofthe polishing pad, from a peripheral position on the polishing pad to aposition near the center of the polishing pad. In view of the expectedradial temperature gradient of the surface of the polishing pad duringpolishing, the width of the pad contact member is large at an outercircumferential side of the polishing pad and is gradually smallertoward the center of the polishing pad. Thus, the pad contact member hasa generally triangular planar-shape, and is a plate-like body having aliquid flow passage therein.

The present applicant has obtained the following knowledge throughrepetition of a process for polishing substrates by a polishing padwhose temperature has been raised by using a pad contact member asdescribed in Japanese Laid-Open Patent Publication No. 2012-176449.

Since the pad contact member is designed to have the largest possiblecontact area under layout restrictions in order to quickly raise thesurface temperature of the polishing pad with the emphasis on anincrease of the polishing rate, the temperature of the polishing pad inits entirety can be raised quickly. However, temperature distribution ofthe polishing pad is such that the increase in the temperature is largerin the outer circumferential portion of the polishing pad than in thecentral portion of the polishing pad. Thus, it has been found that sincethe temperature of the polishing pad in its entirety can be raised bythe pad contact member, the polishing rate is increased, but thepolishing profile is deformed and become the concave. Thus, the centralportion of the surface, being polished, of the substrate is polishedmore than the peripheral portion thereof, resulting in the concavecentral portion of the substrate. If the temperature of the polishingpad is not raised, the polishing profile is not deformed and does notbecome the concave. Thus, it has been found that the temperaturedistribution in the radial direction of the polishing pad andtemperature history of the substrate which is experienced duringpolishing need to be approximated to those as observed in polishingperformed without a pad contact member.

SUMMARY OF THE INVENTION

In an embodiment, there is provided a polishing method and a polishingapparatus which can increase a polishing rate and can control apolishing profile of a substrate being polished by adjusting a surfacetemperature of a polishing pad.

Embodiments, which will be described below, relate to a polishing methodand a polishing apparatus for polishing a substrate such as asemiconductor wafer by bringing the substrate into sliding contact witha polishing pad, and more particularly to a polishing method and apolishing apparatus for polishing the substrate while adjusting asurface temperature of the polishing pad.

In order to achieve the object, in an embodiment, there is provided apolishing method for polishing a substrate by pressing the substrateagainst a polishing pad on a polishing table, comprising: a polishingpad surface temperature adjustment step of adjusting a surfacetemperature of the polishing pad; and a polishing step of polishing thesubstrate by pressing the substrate against the polishing pad having theadjusted surface temperature; wherein in the polishing pad surfacetemperature adjustment step, the surface temperature of a part of anarea of the polishing pad, the area being to be brought in contact withthe substrate, is adjusted during the polishing step so that the rate oftemperature change of a temperature profile in a radial direction of thesurface of the polishing pad becomes constant in the radial direction ofthe polishing pad.

In an embodiment, in the polishing pad surface temperature adjustmentstep, a temperature profile in the radial direction of the surface ofthe polishing pad when the substrate is polished under such polishingconditions as to achieve a target polishing profile in a state where thesurface temperature of the polishing pad is not adjusted is determinedas a reference, and the surface temperature of the part of the area ofthe polishing pad with which the substrate is brought in contact isadjusted during the polishing step so that the rate of temperaturechange of the temperature profile in the radial direction of the surfaceof the polishing pad becomes constant in the radial direction of thepolishing pad with respect to the temperature profile determined as thereference.

In an embodiment, the polishing pad surface temperature adjustment stepis carried out by heating or cooling the part of the area of thepolishing pad by using a pad contact member which is brought in contactwith the surface of the polishing pad.

In an embodiment, the temperature profile in the radial direction of thesurface of the polishing pad is a temperature distribution in the radialdirection of the surface of the polishing pad.

In an embodiment, the rate of temperature change of the temperatureprofile in the radial direction of the surface of the polishing pad iscalculated for each of temperature measurement points on the polishingpad.

In an embodiment, the temperature profile in the radial direction of thesurface of the polishing pad is prepared by defining a plurality ofareas in the radial direction of the polishing pad, providing at leastone temperature measurement point on the polishing pad in each area, andusing measured values measured at the temperature measurement points.

In an embodiment, in the case where a plurality of temperaturemeasurement points are provided in the area, the measured valuesmeasured at the plural temperature measurement points are usedindividually or the average value of the measured values is used.

In an embodiment, the part of the area of the polishing pad whosesurface temperature is adjusted is variable during the polishing stepdepending on the rate of temperature change of the temperature profilein the radial direction of the surface of the polishing pad.

In an embodiment, the temperature measurement of the polishing pad isperformed by a thermograph or a radiation thermometer.

In an embodiment, the part of the polishing pad whose surfacetemperature is adjusted is at least one of a plurality of concentricannular areas defined in the radial direction of the polishing pad.

In an embodiment, there is provided a method for determining atemperature adjustment area of a polishing pad, for use in a polishingmethod for polishing a substrate by pressing the substrate against thepolishing pad on a polishing table, comprising: a first step of defininga plurality of concentric annular areas in a radial direction of thepolishing pad, selecting the area to adjust the surface temperature fromthe defined plural areas, adjusting the surface temperature of theselected area to a predetermined temperature, calculating, for each ofradial positions on the substrate, an amount of heat that the substratereceives from the polishing pad by contact with the temperature-adjustedpolishing pad, calculating, for each of the radial positions on thesubstrate, an integrated value of the amount of heat during rotation ofthe substrate from the calculated amount of heat, thereby obtaining aprofile of the integrated value of the amount of heat in the radialdirection of the substrate, and preparing and accumulating, for eacharea to adjust the surface temperature, the profile of the integratedvalue of the amount of heat; a second step of obtaining a temperatureprofile in the radial direction of the surface of the polishing pad whenthe substrate is polished under such polishing conditions as to achievea target polishing profile in a state where the surface temperature ofthe polishing pad is not adjusted, and calculating, for each of radialpositions on the substrate, an integrated value of the amount of heatduring rotation of the substrate from the temperature profile, therebyobtaining a profile of the integrated value of the amount of heat in theradial direction of the substrate; and a third step of selecting aprofile which is equal or similar to a profile of the integrated valueof the amount of heat, obtained by normalizing the profile of theintegrated value of the amount of heat obtained in the second step, fromprofiles of the integrated value of the amount of heat, obtained bynormalizing the profiles of the integrated value of the amount of heataccumulated in the first step; wherein an area where the surfacetemperature of the polishing pad is adjusted is determined based on theprofile selected in the third step.

In an embodiment, there are a plurality of areas where the surfacetemperature of the polishing pad is adjusted, and the plurality of areashave difference temperatures from each other.

In an embodiment, there is provided a polishing method for polishing asubstrate by pressing the substrate against a polishing pad on apolishing table, comprising: a first step of defining a plurality ofconcentric annular areas in a radial direction of the polishing pad,selecting the area to adjust the surface temperature from the definedplural areas, adjusting the surface temperature of the selected area toa predetermined temperature, calculating, for each of radial positionson the substrate, an amount of heat that the substrate receives from thepolishing pad by contact with the temperature-adjusted polishing pad,calculating, for each of the radial positions on the substrate, anintegrated value of the amount of heat during rotation of the substratefrom the calculated amount of heat, thereby obtaining a profile of theintegrated value of the amount of heat in the radial direction of thesubstrate, and preparing and accumulating, for each area to adjust thesurface temperature, the profile of the integrated value of the amountof heat; a second step of obtaining a temperature profile in the radialdirection of the surface of the polishing pad when the substrate ispolished under such polishing conditions as to achieve a targetpolishing profile in a state where the surface temperature of thepolishing pad is not adjusted, and calculating, for each of radialpositions on the substrate, an integrated value of the amount of heatduring rotation of the substrate from the temperature profile, therebyobtaining a profile of the integrated value of the amount of heat in theradial direction of the substrate; a third step of selecting a profilewhich is equal or similar to a profile of the integrated value of theamount of heat, obtained by normalizing the profile of the integratedvalue of the amount of heat obtained in the second step, from profilesof the integrated value of the amount of heat, obtained by normalizingthe profiles of the integrated value of the amount of heat accumulatedin the first step; and a fourth step of determining an area where thesurface temperature of the polishing pad is adjusted based on theprofile selected in the third step, and polishing the substrate bypressing the substrate against the polishing pad while adjusting thesurface temperature of the determined area of the polishing pad.

In an embodiment, there are a plurality of areas where the surfacetemperature of the polishing pad is adjusted, and the plurality of areashave difference temperatures from each other.

In an embodiment, the temperature profile in the radial direction of thesurface of the polishing pad is prepared during the polishing of thesubstrate.

In an embodiment, the temperature profile in the radial direction of thesurface of the polishing pad is a temperature distribution in the radialdirection of the surface of the polishing pad.

In an embodiment, the rate of temperature change of the temperatureprofile in the radial direction of the surface of the polishing pad iscalculated for each of temperature measurement points on the polishingpad.

In an embodiment, the area of the polishing pad whose surfacetemperature is adjusted is variable depending on the rate of temperaturechange during the polishing of the substrate.

In an embodiment, the temperature measurement of the polishing pad isperformed by a thermograph or a radiation thermometer.

In an embodiment, there is provided a polishing apparatus for polishinga substrate by pressing the substrate against a polishing pad on apolishing table, comprising: a top ring configured to press thesubstrate against the polishing pad on the polishing table; and a padtemperature adjustment mechanism configured to adjust a surfacetemperature of the polishing pad; wherein the pad temperature adjustmentmechanism comprises a pad contact member configured to be brought incontact with the surface of the polishing pad, and a liquid supplysystem configured to supply a temperature-adjusted liquid to the padcontact member; and wherein the temperature-adjusted liquid comprisesheated water or cold water, and the heated water and the cold water aresupplied selectively, without being mixed, to the pad contact member byvalve switching.

In an embodiment, when the valve switching is performed, the cold wateris supplied to the pad contact member after returning the heated water,remaining in the pad contact member and piping, to the liquid supplysystem.

In an embodiment, when the valve switching is performed, the heatedwater is supplied to the pad contact member after discharging the coldwater remaining in the pad contact member and piping.

In an embodiment, there is provided a polishing apparatus for polishinga substrate by pressing the substrate against a polishing pad on apolishing table, comprising: a top ring configured to press thesubstrate against the polishing pad on the polishing table; and a padtemperature adjustment mechanism configured to adjust a surfacetemperature of the polishing pad; wherein the pad temperature adjustmentmechanism comprises a pad contact member configured to be brought incontact with the surface of the polishing pad to heat or cool thepolishing pad; and wherein the pad contact member has a plurality ofareas whose temperatures can be adjusted individually, and a temperatureprofile in a radial direction of the surface of the polishing pad can beadjusted by adjusting the temperature of at least one of the pluralityof areas.

In an embodiment, heated water or cold water can be supplied to each ofthe plurality of areas of the pad contact member at a controlled flowrate.

The above-described embodiments achieve the following advantageouseffects:

1) By adjusting the surface temperature of the polishing pad, it becomespossible to control the polishing profile while increasing the polishingrate.

2) The polishing profile of a film, being polished, of the substrate canbe adjusted, without measuring the thickness of the film, based on dataobtained by a method for measuring the surface temperature of thepolishing pad.

3) The temperature history of the substrate can be controlled bysupplying liquids at different flow rates to the respective areas of thepad contact member. Further, the temperature history of the substratecan be controlled by moving the pad contact member and adjusting thetemperature of the polishing pad.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view showing a polishing apparatus according to anembodiment;

FIG. 2 is a schematic view showing a liquid supply system for supplyinga liquid to a pad contact member;

FIG. 3A is a view showing a conventional pad contact member, a polishingpad and a substrate (wafer) to be polished, and FIG. 3B is a perspectiveview showing the pad contact member of FIG. 3A and FIG. 3C is a planview showing the configuration of a flow passage formed in the interiorof the pad contact member shown in FIG. 3B;

FIG. 4A is a perspective view showing the entire pad contact member, andFIG. 4B is a view showing the flow passage in the pad contact member andthe sealing members placed in the flow passage and FIG. 4C is a viewshowing the heating area in the case where the improved pad contactmember having the modified flow passage is used;

FIGS. 5A, 5B and 5C are graphs showing the confirmed results of theeffects by the change of the heating area in the case where the improvedpad contact member is used against the conventional pad contact member;

FIGS. 6A and 6B are views showing a pad contact member according to anembodiment, and FIG. 6A is a perspective view of the pad contact member,and FIG. 6B is a perspective view showing a configuration of a flowpassage formed in the interior of the pad contact member and FIG. 6C isa view showing the heating area in the case where the pad contact memberconfigured as shown in FIGS. 6A and 6B is used;

FIG. 7 is a graph showing comparative data between the pad temperaturedistribution obtained by thermal analysis result in the case where theimproved pad contact member shown in FIGS. 4A and 4B is used and the padtemperature distribution obtained by thermal analysis result in the casewhere the pad contact member of the embodiment shown in FIGS. 6A and 6Bis used, and is a graph showing the relationship between a radialposition (mm) on the polishing pad and the temperature (° C.) of a waterfilm on the polishing pad;

FIGS. 8A through 8E are views showing the evaluation results in the casewhere the pad contact member of the embodiment shown in FIGS. 6A and 6Bis moved radially on the polishing pad;

FIG. 9 is a view showing arrangement position of the pad contact memberon the polishing pad using concentric circles;

FIGS. 10A, 10B and 10C are views illustrating the concept of thetemperature history;

FIG. 11A is a view showing the evaluation results of the polishing ratein the case where the pad contact member of the embodiment shown inFIGS. 6A and 6B is moved radially on the polishing pad, FIG. 11B is aview showing the evaluation results of the integrated values of thetemperature history, and FIG. 11C is a view showing the evaluationresults of the normalized integrated values of the temperature history;

FIGS. 12A and 12B are comparative views showing the pad contact membershown in FIGS. 6A and 6B according to the embodiment and the pad contactmember according to another embodiment;

FIGS. 13A, 13B and 13C are perspective views each showing theconstruction of a flow passage formed in the pad contact member shown inFIG. 12B;

FIG. 14A is a view showing the case where the evaluation results of theintegrated value of the temperature history in the case of using the padcontact member according to another embodiment shown in FIG. 12B isadded to the evaluation results of the integrated value of thetemperature history shown in FIG. 11B, and FIG. 14B is a view showingthe evaluation results of the normalized integrated value of thetemperature history;

FIGS. 15A, 15B and 15C are views showing the evaluation results oftemperature in the case where the surface of the polishing pad is heatedby using the pad contact member according to another embodiment shown inFIGS. 13A, 13B and 13C and by changing the flow rate of the liquid(heated water) supplied to the pad contact members;

FIG. 16 is a perspective view showing a pad temperature adjustmentmechanism which has a mechanism for moving the pad contact member in theradial direction of the polishing pad;

FIG. 17 is a perspective view showing a pad temperature adjustmentmechanism which has an automated mechanism for reciprocating the padcontact member in the radial direction of the polishing pad;

FIG. 18 is a view showing an embodiment in which the pad contact memberis divided into a plurality of regions, i.e., an inner region and anouter region in the radial direction of the polishing pad, and a liquid(heated water) can be supplied individually to each of the inner andouter regions so as to control the temperature in the radial directionof the polishing pad for each of the corresponding inner and outerareas;

FIG. 19 is a view showing an embodiment in which a plurality of padcontact members, each comprised of a ceramic heater having a built-inheater, are arranged in the radial direction of the polishing pad so asto control the temperature in the radial direction of the polishing padfor each of the corresponding annular areas;

FIG. 20A is a diagram showing a liquid supply system for selectivelysupplying heated water and cold water to the pad contact member, andFIG. 20B is a diagram showing the states of the respective valves whenperforming switching from the supply of heated water to the supply ofcold water and switching from the supply of cold water to the supply ofheated water; and

FIGS. 21A and 21B are views showing a method for controlling switchingbetween the supply of heated water and the supply of cold water in orderto control the surface temperature of the polishing pad at a presettemperature.

DESCRIPTION OF EMBODIMENTS

Embodiments of a polishing apparatus will be described below withreference to FIGS. 1 through 21B. In FIGS. 1 through 21B, identical orcorresponding components will be denoted by identical referencenumerals, and repetitive descriptions thereof are omitted.

FIG. 1 is a schematic view of a polishing apparatus according to anembodiment. As shown in FIG. 1, the polishing apparatus includes a topring 1 for holding and rotating a substrate such as a semiconductorwafer, a polishing table 2 for supporting a polishing pad 3 thereon, apolishing liquid supply mechanism 4 for supplying a polishing liquid(e.g., slurry) onto a surface of the polishing pad 3, and a padtemperature adjustment mechanism 5 for adjusting a surface temperatureof the polishing pad 3.

The top ring 1 is supported by a polishing head support arm 7, which isprovided with a pneumatic cylinder and a motor (not shown) that move thetop ring 1 vertically and rotate the top ring 1 about its own axis. Thesubstrate is held on a lower surface of the top ring 1 by vacuum suctionor other means. The polishing table 2 is coupled to a motor (not shown),so that the polishing table 2 can rotate in a direction indicated byarrow.

The substrate to be polished is held by the top ring 1 and furtherrotated by the top ring 1. On the other hand, the polishing pad 3 isrotated about its own axis together with the polishing table 2. In thisstate, the polishing liquid is supplied onto a surface of the polishingpad 3 from the polishing liquid supply mechanism 4 and a surface of thesubstrate is pressed against the surface of the polishing pad 3 (i.e.,substrate polishing surface) by the top ring 1. The surface of thesubstrate is polished by sliding contact between the polishing pad 3 andthe substrate in the presence of the polishing liquid.

The pad temperature adjustment mechanism 5 includes a pad contact member11 that is brought into contact with the surface of the polishing pad 3,and a liquid supply system 30 for supplying a temperature-controlledliquid to the pad contact member 11. The pad contact member 11 iscoupled to a pneumatic cylinder 52 through an arm 54. This pneumaticcylinder 52 serves as an elevating mechanism for raising and loweringthe pad contact member 11. Further, the pad contact member 11 is coupledto a motor 53 serving as a moving mechanism, so that the pad contactmember 11 is moved between a predetermined raised position located abovethe polishing pad 3 and a predetermined retreat position locatedradially outwardly of the polishing table 2.

FIG. 2 is a schematic view showing the liquid supply system 30 forsupplying the liquid to the pad contact member 11. This liquid supplysystem 30 has a liquid supply tank 31, and a supply line 32 and a returnline 33 for coupling the liquid supply tank 31 and the pad contactmember 11 to each other. The liquid, as a heating medium, is supplied tothe pad contact member 11 from the liquid supply tank 31 through thesupply line 32, and is returned from the pad contact member 11 to theliquid supply tank 31 through the return line 33. In this manner, theliquid circulates between the liquid supply tank 31 and the pad contactmember 11. The liquid supply tank 31 has a heater (not shown) forheating the liquid, and thus the liquid is heated to a predeterminedtemperature by the heater. Specifically, the liquid supply tank 31serves as a temperature regulator.

The liquid supply system 30 includes a flow rate regulating valve 35 forregulating a flow rate of the liquid flowing through the supplying line32, a pressure gauge 36 for measuring the pressure of the liquid thathas passed through the flow rate regulating valve 35, and a flowmeter 37for measuring a flow rate of the liquid flowing through the return line33. The liquid supply system 30 further includes a radiation thermometer39 serving as a pad surface thermometer for measuring the surfacetemperature of the polishing pad 3, and a temperature controller 40 forcontrolling the flow rate regulating valve 35 based on the pad surfacetemperature measured by the radiation thermometer 39. The flow rate ofthe liquid flowing through the supply line 32 is regulated by an openingdegree of the valve determined by supplying an air pressure controlledby an electropneumatic regulator 43 to the flow rate regulating valve35. A cooling water line 41 is connected to the supply line 32, and thuscooling water can be supplied to the supply line 32 from the coolingwater line 41. Further, a discharge line 42 is connected to the returnline 33, and thus the liquid flowing through the return line 33 can bedischarged therefrom.

The radiation thermometer 39 is designed to measure the surfacetemperature of the polishing pad 3 in a noncontact manner and send themeasured value of the surface temperature to the temperature controller40. The temperature controller 40 controls the electropneumaticregulator 43 based on the measured value of the surface temperature ofthe polishing pad 3 so that the surface temperature of the polishing pad3 becomes a preset target temperature. The electropneumatic regulator 43supplies an air pressure controlled based on a control signal from thetemperature controller 40 to the flow rate regulating valve 35. Theopening degree of the flow rate regulating valve 35 is regulated by theair pressure supplied from the electropneumatic regulator 43, and theflow rate of the liquid supplied to the pad contact member 11 iscontrolled. The surface temperature of the polishing pad 3 is adjustedby the heat exchange between the liquid flowing through the pad contactmember 11 and the polishing pad 3.

By performing such a feedback control, the surface temperature of thepolishing pad 3 is maintained at the predetermined target temperature. APID controller can be used as the temperature controller 40. The targettemperature of the polishing pad 3 is determined by a CMP controller 50depending on a type of the substrate or a polishing process. Thedetermined temperature setting control signal is inputted to thetemperature controller 40.

As described above, the surface temperature of the polishing pad 3 iscontrolled by regulating the flow rate of the liquid to be supplied tothe pad contact member 11. Water is used as the liquid (heating medium)to be supplied to the pad contact member 11. The water is heated by theheater of the liquid supply tank 31 to, for example, about 80° C., thusbecoming heated water. In order to increase the surface temperature ofthe polishing pad 3 more rapidly, a silicone oil may be used as theheating medium. In the case where the silicone oil is used, the siliconeoil is heated by the heater of the liquid supply tank 31 to 100° C. ormore (for example, about 120° C.). In order to enable heated water andcooling water to be supplied interchangeably by switching to the padcontact member 11, the supply line 32, the return line 33, the coolingwater line 41, the discharge line 42, and the like have respectivevalves V1 to V5 (described later).

The pad contact member 11 employed in the pad temperature adjustmentmechanism 5 will now be described.

The present inventors have invented the pad contact member 11 shown inFIG. 1 by variously changing the heating area of a polishing pad using apad contact member as described in Japanese Laid-Open Patent PublicationNo. 2012-176449. A process for developing the invention will bedescribed below.

FIG. 3A is a view showing a conventional pad contact member 111, apolishing pad 3 and a substrate (wafer) W to be polished. FIG. 3B is aperspective view showing the pad contact member 111 of FIG. 3A, and FIG.3C is a plan view showing the configuration of a flow passage formed inthe interior of the pad contact member 111 shown in FIG. 3B.

As shown in FIG. 3A, the pad contact member 111, which comprises aplate-shaped body having a generally triangular-planar shape and havinga flow passage in its interior, can be brought into contact with thepolishing pad 3 from an outer circumferential side to a central part ofthe polishing pad 3. The substrate (wafer) W to be polished ispositioned on the opposite side of the pad contact member 111 across thecenter (O) of the polishing pad 3.

As shown in FIG. 3B, the pad contact member 111 includes a plate member115 having a contact surface which is brought into contact with thesurface of the polishing pad 3, and a flow passage-forming member 116which has a liquid flow passage formed therein. The plate member 115 isfixed to the lower part of the flow passage-forming member 116. A liquidinflow port 123 and a liquid discharge port 124 are formed in the uppersurface of the flow passage-forming member 116.

As shown in FIG. 3C, a partition 118 extending in the radial directionof the polishing pad 3 is provided in the interior of the flowpassage-forming member 116. The interior space of the flowpassage-forming member 116 is divided by the partition 118 into a firstliquid flow passage 121 and a second liquid flow passage 122. The firstliquid flow passage 121 and the second liquid flow passage 122 areconnected in series. More specifically, a downstream end of the firstliquid flow passage 121 is connected to an upstream end of the secondliquid flow passage 122. The first liquid flow passage 121 communicateswith the liquid inflow port 123, and the second liquid flow passage 122communicates with the liquid discharge port 124. A plurality of baffles125 are disposed in each of the first liquid flow passage 121 and thesecond liquid flow passage 122.

A liquid is supplied to the first liquid flow passage 121 via the liquidinflow port 123. The liquid flows through the first liquid flow passage121 and the second liquid flow passage 122 in this order, so that theheat exchange is performed between the liquid and the polishing pad 3.The liquid is discharged from the liquid discharge port 124.

FIGS. 4A and 4B are views showing the state in which the flow passage inthe pad contact member 111 is changed by placing sealing members in theinterior of the pad contact member 111 shown in FIGS. 3B and 3C. FIG. 4Ais a perspective view showing the entire pad contact member 111, andFIG. 4B is a view showing the flow passage in the pad contact member 111and the sealing members placed in the flow passage.

As shown in FIG. 4A, in addition to the liquid inflow port (shown with“IN (original)” in the drawing) and the liquid discharge port (shownwith “OUT (original)” in the drawing) formed in the original pad contactmember 111, one liquid inflow port (shown with “IN (additional work)” inthe drawing) and two liquid discharge ports (shown with “OUT (additionalwork)” in the drawing) are formed.

Further, as shown in FIG. 4B, sealing members 126, 127 are placed in theflow passage of the pad contact member 111. In the improved pad contactmember 111 having the sealing members 126, 127, the liquid that hasflowed therein from the liquid inflow port (IN (additional work)) flowsout from the two additional liquid discharge ports (OUT (additionalwork)). The liquid (heated water) flows only in the interior of thetriangular plate-shaped portion located at the upper side of the padcontact member 111, and does not flow in the interior of the generallytrapezoidal plate-shaped portion located at the lower side of the padcontact member 111.

FIG. 4C is a view showing the heating area in the case where theimproved pad contact member 111 having the modified flow passage shownin FIGS. 4A and 4B is used. As shown in FIG. 4C, the heating area is aconcentric annular area A1 on the polishing pad 3 in the case where theconventional pad contact member 111 is used, whereas the heating area isa concentric annular area A2 on the polishing pad 3 in the case wherethe improved pad contact member 111 is used. Thus, the outercircumferential side of the polishing pad 3 is not heated when theimproved pad contact member 111 is used. In FIG. 4C, a substrate (wafer)W to be polished is positioned on the opposite side of the pad contactmember 111 across the center (O) of the polishing pad 3.

FIGS. 5A, 5B and 5C are graphs showing the confirmed results of theeffects by the change of the heating area in the case where the improvedpad contact member 111 is used against the conventional pad contactmember 111.

In FIGS. 5A, 5B and 5C, “Reference” indicates data in the case of notusing a pad contact member, “Original Slider (3.5)” indicates data inthe case of using the conventional pad contact member shown in FIGS. 3A,3B and 3C, and “Sealed Slider (3.5)” and “Sealed Slider (7.0)” indicatedata in the case of using the improved pad contact member shown in FIGS.4A and 4B. In the cases of “Sealed Slider (3.5)” and “Sealed Slider(7.0)”, the liquid was allowed to flow in the improved pad contactmember at a flow rate of 3.5 liters/min and 7.0 liters/min,respectively. In either case, the liquid was supplied from IN(additional work), and discharged from both of the two OUT (additionalwork).

When the temperature of the polishing pad became stable after asubstrate (wafer) W starts to be polished, in particular after 50seconds had elapsed since the start of polishing, the temperature of thesurface of the polishing pad was measured. The polishing time was 60seconds. FIG. 5A shows the measured results of the temperature of thepolishing pad, at 9 equally spaced-apart points from a point at adistance of about 50 mm to a point at a distance of about 340 mm in theradial direction from the center of the polishing pad. In FIG. 5A, thetemperature shown on the vertical axis is expressed in arbitrary unit.Temperature in the present embodiments is hereinafter expressed inarbitrary unit as with in FIG. 5A. As is clear from FIG. 5A, in the caseof “Original Slider (3.5)”, the temperature increase of the polishingpad is larger in the outer circumferential part of the polishing padthan in the central part of the polishing pad. In the cases of “SealedSlider (3.5)” and “Sealed Slider (7.0)”, while the rate of temperatureincrease of the polishing pad is slightly smaller as compared to thecase of “Original Slider (3.5)”, the temperature increase in the outercircumferential part of the polishing pad is suppressed and thetemperature distribution thereof comes close to the temperaturedistribution in the case of “Reference” having no pad contact member.However, even in the cases of “Sealed Slider (3.5)” and “Sealed Slider(7.0)”, the rate of temperature increase is small in an area from about75 mm to about 150 mm in the distance from the center of the polishingpad. Specifically, it is understood that there is an area where the rateof temperature increase is not constant, i.e., is small, compared to thecase of “Reference” where a pad contact member is not used. The rate oftemperature increase herein refers to the rate of temperature changeshowing how much the temperature increases and changes at respectivepoints in the radial direction of the polishing pad, as compared to thetemperature profile of the polishing pad in the radial direction of thepolishing pad in the case where a pad contact member is not used.

FIG. 5B shows the rate of temperature increase (rate of temperaturechange) of the polishing pad in the case where the pad contact member isused, compared to the case where a pad contact member is not used. Thehorizontal axis represents the distance from the center of the polishingpad (radial position on the polishing pad), and the vertical axisrepresents the rate of temperature increase of the polishing pad byusing the temperature of “Reference” having no pad contact member as thecriterion of 1. The data shown in FIG. 5B is obtained by using the dataon the temperature of the polishing pad shown in FIG. 5A. As is clearalso from FIG. 5B, in the case of “Original Slider (3.5)”, the rate oftemperature increase of the polishing pad is larger in the outercircumferential portion of the polishing pad. In the cases of “SealedSlider (3.5)” and “Sealed Slider (7.0)”, the rate of temperatureincrease in the outer circumferential portion of the polishing pad issuppressed, and the temperature profile is close to a fairly flat line.Further, it is more clearly shown in FIG. 5B that the rate oftemperature increase in the area (surrounded by the ellipse in FIG. 5B)from about 75 mm to about 150 mm in the distance from the center of thepolishing pad is lowered.

FIG. 5C shows the polishing rate when 50 seconds have elapsed since thestart of polishing of the wafer W. In FIG. 5C, the polishing rate on thevertical axis is expressed in arbitrary unit. In the embodiments,hereinafter, the polishing rate is expressed in arbitrary unit as withFIG. 5C. The polishing time was 60 seconds. As is clear from FIG. 5C,the polishing rate increases in all of the cases where the pad contactmember is used. From the viewpoint of polishing profile, thedistribution profile of the polishing rate is preferably as close aspossible to the distribution profile of the polishing rate in the caseof “Reference” where a pad contact member is not used. Except for anarea around the outer circumferential portion of the wafer W, thedistribution profile of the polishing rate in the cases of “SealedSlider (3.5)” and “Sealed Slider (7.0)” is close to that in the case of“Reference”. However, there is a considerable variation in thedistribution profile of the “Original Slider (3.5)”.

From the experiments shown in FIGS. 5A, 5B and 5C which were conductedusing the conventional pad contact member 111 and the improved padcontact member 111, the present inventors have found that, by using theimproved pad contact member 111, over-polishing of the central area ofthe substrate can be avoided, and thus the polishing profile can bebrought close to that in the case of not using a pad contact member. Thepresent inventors have also found that when an area of the polishingpad, whose distance from the center of the polishing pad ranges fromabout 75 mm to about 150 mm, is heated to a little more, then thepolishing profile can be brought further closer to that in the case ofnot using a pad contact member.

Specifically, it has been found that, by controlling the temperature(heating) of a predetermined area in a radial direction of the polishingpad, the rate of temperature increase (rate of temperature change) atrespective points in the radial direction of the polishing pad surface,by using the temperature profile, as a reference, in the radialdirection of the polishing pad surface in the case of not using a padcontact member, can be made constant over the radial direction of thepolishing pad.

FIGS. 6A and 6B are views showing a pad contact member 11 according toan embodiment which has been invented based on the above knowledge. FIG.6A is a perspective view of the pad contact member 11, and FIG. 6B is aperspective view showing a configuration of a flow passage formed in theinterior of the pad contact member 11.

As shown in FIG. 6A, the pad contact member 11 of the embodiment is aplate-shaped body having a planar shape of a generally trapezoidal shapeand having a flow passage therein. Specifically, the pad contact member11 has an upper side 11 a, a lower side 11 b, and right and left sides11 s, 11 s, and has a planar shape of a generally trapezoidal shape,with the upper side 11 a and the lower side 11 b being parallel.Further, both end portions of the upper surface 11 a of the pad contactmember 11 are inclined with respect to the central portion, thus forminginclined sides 11 al, 11 ar. Therefore, the planar shape of the padcontact member 11 should be called a deformed hexagonal shape.

As shown in FIG. 6A, the pad contact member 11 of the embodimentincludes a flow passage-forming member 12 having a liquid flow passageformed therein and having a lower surface which is brought into contactwith the surface of the polishing pad 3, and a plate member 13 fixed tothe upper surface of the flow passage-forming member 12. A liquid inflowport 15 and a liquid discharge port 16 are formed in the upper surfaceof the flow passage-forming member 13.

FIG. 6B is a plan view showing the flow passage-forming member 12. Asshown in FIG. 6B, a plurality of partitions 14, which extendhorizontally and are bent upward at the left ends, are formed in theflow passage-forming member 12. The plural partitions 14, at the ends ofthe horizontal portions or at the upper ends of the bent portions, areconnected to an outer frame. These partitions 14 form a singlemulti-folded zigzag flow passage. Referring to FIG. 6B, the portionshown as “HEATED WATER IN” communicates with the liquid inflow port 15,so that a liquid (heated water) flows in from the above portion. Theportion shown as “HEATED WATER OUT” communicates with the liquiddischarge port 16, so that the liquid (heated water) flows out from theabove portion.

FIG. 6C is a view showing the heating area in the case where the padcontact member 11 configured as shown in FIGS. 6A and 6B is used. Asshown in FIG. 6C, when the pad contact member 11 is used, the heatingarea is a concentric annular area A3 on the polishing pad 3. Thus, byusing the pad contact member 11 of the embodiment, the outercircumferential side of the polishing pad 3 will not be heated. In FIG.6C, the pad contact member 11 and the substrate (wafer) W to be polishedare positioned so as to sandwich the center (O) of the polishing pad 3therebetween.

FIG. 7 is a graph showing comparative data between the pad temperaturedistribution obtained by thermal analysis result in the case where theimproved pad contact member 111 shown in FIGS. 4A and 4B is used and thepad temperature distribution obtained by thermal analysis result in thecase where the pad contact member 11 of the embodiment shown in FIGS. 6Aand 6B is used, and is a graph showing the relationship between a radialposition (mm) on the polishing pad and the temperature (° C.) of a waterfilm on the polishing pad.

In FIG. 7, “Current Sealing” indicates data in the case of using theSealed Slider (3.5) described in FIGS. 5A, 5B and 5C, and “DeformedHexagon” indicates data in the case of using the pad contact member 11of the embodiment shown in FIGS. 6A and 6B.

As is clear from FIG. 7, in the case of “Current Sealing” where theSealed Slider (3.5) is used, the temperature of the water film on thepolishing pad gently increases until the radial position on thepolishing pad reaches about 150 mm, and is kept approximately constantuntil the radial position reaches about 200 mm, and then graduallydecreases when the radial position becomes larger than 200 mm. On theother hand, in the case of “Deformed Hexagon” where the pad contactmember 11 of the embodiment is used, the temperature of the water filmon the polishing pad starts to increase from where the radial positionon the polishing pad reaches about 50 mm, and reaches the maximumtemperature at the radial position of 150 mm or thereabout, and thendecreases gradually as the radial position becomes larger than 150 mm,and then becomes constant from where the radial position exceeds 250 mm.In the radial position range of about 75 mm to about 200 mm, thetemperature of the water film on the polishing pad is higher in the caseof “Deformed Hexagon” than in the case of “Current Sealing”. In thismanner, the change in the shape of the pad contact member produces asignificant effect on the temperature of the water film on the polishingpad.

FIGS. 8A through 8E are views showing the evaluation results in the casewhere the pad contact member 11 of the embodiment shown in FIGS. 6A and6B is moved radially on the polishing pad 3. In FIGS. 8A through 8E,“Ref without Slider” indicates the evaluation results in the case of notusing a pad contact member, and “New Type 0 mm”, “New Type 50 mm” and“New Type 100 mm” indicate the evaluation results in the case where thepad contact member 11 of the embodiment was placed on the polishing pad3 at the various radial positions shown in FIG. 9. In FIG. 9, thesymbols C1, C2 and C3 represent concentric circles centered at thecenter (O) of the polishing pad 3 and having different radii (R): theradius R of the circle C1 is 190 mm; the radius R of the circle C2 is240 mm; and the radius R of the circle C3 is 290 mm. The concentriccircle C1 is a concentric circle that passes through the center of thesubstrate W to be polished.

In the case of “New Type 0 mm”, the pad contact member 11 is placed onthe polishing pad 3 such that the midpoint of the lower side 11 b of thepad contact member 11 accords with the concentric circle C1. In the caseof “New Type 50 mm”, the pad contact member 11 is placed on thepolishing pad 3 such that the midpoint of the lower side 11 b of the padcontact member 11 accords with the concentric circle C2 which is shiftedradially outward by 50 mm from the concentric circle C1. In the case of“New Type 100 mm”, the pad contact member 11 is placed on the polishingpad 3 such that the midpoint of the lower side 11 b of the pad contactmember 11 accords with the concentric circle C3 which is shiftedradially outward by 100 mm from the concentric circle C1.

FIG. 8A is a graph showing the relationship between a radial position onthe substrate and the polishing rate.

As is clear from FIG. 8A, the polishing rate is higher in the cases of“New Type 0 mm”, “New Type 50 mm” and “New Type 100 mm” where the padcontact member 11 is used than in the case of “Ref without Slider” wherethe pad contact member is not used. In an area of the substrate aroundthe radial position of ±140 mm, i.e., in an edge area of the substrate,the distribution profiles of the polishing rate in the cases of “NewType 0 mm”, “New Type 50 mm” and “New Type 100 mm” are similar to thatin the case of “Ref without Slider”. Thus, it would appear that the useof the pad contact member has little effect on the polishing profile inthe edge area of the substrate. On the other hand, in the central areaof the substrate, the polishing rate in the case of “New Type 0 mm” isthe highest, the polishing rate in the case of “New Type 50 mm” is thesecond highest, and the polishing rate in the case of “New Type 100 mm”is the lowest. Thus, it is understood that the installation position ofthe pad contact member has a considerable effect on the polishingprofile in the central area of the substrate. Here, the distribution ofthe polishing rate in the case of “New Type 50 mm” is closest to that inthe case of “Ref without Slider”, and the polishing profile of thesubstrate becomes flatter in the case of “New Type 50 mm”.

FIGS. 8B, 8C and 8D show the relationship between a radial position onthe polishing pad and the temperature ratio of the polishing pad when 50seconds have elapsed since the start of polishing of the substrate. FIG.8B shows data in the case of not using a pad contact member (Ref) anddata in the case of “New Type 0 mm”, FIG. 8C shows data in the case ofnot using a pad contact member (Ref) and data in the case of “New Type50 mm”, and FIG. 8D shows data in the case of not using a pad contactmember (Ref) and data in the case of “New Type 100 mm”. The temperatureratio of the polishing pad is determined by using the temperature at ameasurement point closest to the center of the polishing pad as thecriterion of 1 in the case of using “New Type 0 mm”. The range of radialposition on the polishing pad in which the temperature is measuredcorresponds to the range in which the substrate is brought into contactwith the polishing pad.

As is clear from FIGS. 8B through 8D, it is understood that thetemperature of the polishing pad is higher in the case of using the padcontact member than in the case of not using a pad contact member, thelocation of temperature increase changes with the movement of theinstallation position of the pad contact member, and in either case thetemperature ratio of the polishing pad becomes not more than 1 when theradial position on the polishing pad exceeds 230 mm, and then the padtemperature decreases as the radial position comes closer to the outercircumferential portion of the polishing pad. Of the cases “New Type 0mm”, “New Type 50 mm” and “New Type 100 mm”, the distribution of thetemperature ratio of the polishing pad in the case of “New Type 50 mm”shown in FIG. 8B is closest to that in the case of not using a padcontact member (Ref).

FIG. 8E shows a change with time of the temperature of the polishing padin a portion with which the center of the substrate (wafer) is broughtinto contact. All the cases “New Type 0 mm”, “New Type 50 mm” and “NewType 100 mm” show substantially the same profile of the change in thepad temperature so as to overlap one another, though there is a slightdifference between the respective profiles, and shows the profiles ofthe change similar to the profile of the change in the case of “Ref”.

As shown in FIGS. 8B, 8C and 8D, the surface temperature of thepolishing pad 3 heated by the pad contact member 11 varies with theradial position on the polishing pad 3. As described above withreference to FIG. 9, the center of the substrate W to be polished ispositioned on the concentric circle C1. The top ring 1 holding thesubstrate W remains at the position shown in FIG. 1 during polishing,and therefore the center of the substrate W is positioned on theconcentric circle C1 at all times. Because the substrate W beingpolished rotates about the center of the substrate by the rotation ofthe top ring 1, the point on the polishing pad 3 which is brought incontact with a particular point on the substrate, located at a distancefrom the center of the substrate, changes with every moment. In otherwords, the particular point on the substrate comes into contact withdifferent points on the polishing pad 3 located at different radialpositions every moment. Because the surface temperature of the polishingpad 3 varies with the radial position on the polishing pad 3, respectivepoints on the substrate each momentarily come into contact withdifferent temperatures. The substrate is thus subjected to a temperaturehistory.

FIGS. 10A, 10B and 10C are views illustrating the concept of thetemperature history.

FIG. 10A is a perspective view showing the polishing pad 3, thesubstrate (wafer) W and the pad contact member 11. As shown in FIG. 10A,the polishing pad 3 rotates about its own center O1, and the substrate Wwhich is brought into sliding contact with the polishing pad 3 rotatesabout its own center O2. Four concentric circles C1, C2, C3 and C4 aredrawn around the center O1 on the polishing pad 3. Because the surfaceof the polishing pad 3 is being heated by the pad contact member 11, thesurface temperature of the polishing pad 3 varies with the radialposition on the polishing pad 3 as shown by the upper graph in FIG. 10A.During 360-degree rotation of the substrate W, respective points on thesurface, being polished, of the substrate W which is brought in contactwith the surface of the polishing pad 3 come into contact withrespective points, having different surface temperatures, located atdifferent radial positions on the polishing pad 3.

The relationship between the rotation angle (0°-360°) of the substrateand the surface temperature of the polishing pad 3 at a point whichchanges with every moment and which is in contact with a point on thesubstrate, located on a circle having a radius R and centered at thecenter O2 of the substrate W, with the radius R being as a variable(R=0-150 mm when the diameter of the substrate is 300 mm) can be definedas temperature history. The temperature history can be expressed in agraph as shown in FIG. 10B in which the horizontal axis represents therotation angle (0°-360°) of the substrate, and the vertical axisrepresents the surface temperature of the polishing pad 3 at a pointwhich changes with every moment and which is in contact with the pointon the substrate (hereinafter referred to also as “the surfacetemperature of the polishing pad 3”). Specifically, when the radius R=0,the point on the substrate is always located on the concentric circle C2on the polishing pad 3 as shown in FIG. 10A, and therefore the surfacetemperature of the polishing pad 3 does not change even if the rotationangle of the substrate changes. Thus, the relationship between therotation angle of the substrate and the surface temperature of thepolishing pad 3 can be expressed as a straight line parallel to thehorizontal axis, as shown in FIG. 10B. As the radius R increases, theline that represents the relationship between the rotation angle of thesubstrate and the surface temperature of the polishing pad 3 becomes awave shape having ridges and valleys with an increasing amplitude. Inthe illustrated example, three lines in the cases of R=0 mm, R=5 mm, andR=150 mm are shown.

As described above, FIG. 10B shows the temperature history, with respectto the rotation angle of the substrate, of a point on the substrate inthe cases of R=0 mm, R=5 mm, and R=150 mm. FIG. 10C shows integrationdata on the temperature history at a radial position R on the substratewhich are integrated over the rotational angle range of 0° to 360°. Theintegrated value in the case of R=0 mm, 5 mm or 150 mm, for example, canbe determined by determining the area between each of the lines and thehorizontal axis in FIG. 10B. The relationship between the radius R onthe substrate (radial position on the substrate) and the integratedvalue determined in each radius R can be defined as the integrated valueof the temperature history during 360-degree rotation of the substrate.This integrated value of the temperature history can be expresses asshown in FIG. 10C. With reference to the exemplary data illustrated inFIG. 10C, the integrated value of the temperature history is the largestat the center of the substrate, and the integrated value decreasestoward the outer circumferential side in the radial position on thesubstrate. Here, although the expression “the integrated value of thetemperature history” is used, the expression “the integrated value ofthe amount of heat” may be used if the temperature history is taken asthe amount of heat that the substrate has received from the polishingpad.

Thus, the amount of heat that the substrate receives from the polishingpad is calculated, and from the calculated amount of heat, theintegrated value of the amount of heat associated with the rotation ofthe substrate is calculated for each of different radial positions onthe substrate, thereby obtaining a profile of the integrated value ofthe amount of heat in the radial direction of the substrate. The profileof the integrated value of the amount of heat is prepared andaccumulated for each of those areas of the polishing pad whose surfacetemperatures are adjusted. Then, in comparison with the profile of theintegrated value of the amount of heat in the reference case of notusing a pad contact member, a profile closest to the reference profileof the integrated value of the amount of heat is selected from theaccumulated profiles of the integrated value of the amount of heat.Based on the selected profile of the integrated value of the amount ofheat, the area where the surface temperature of the polishing pad isadjusted is determined.

FIGS. 11A, 11B and 11C are views showing the evaluation results of thepolishing rate (FIG. 11A) in the case where the pad contact member 11 ofthe embodiment shown in FIGS. 6A and 6B is moved radially on thepolishing pad 3, the evaluation results of the integrated values of thetemperature history (FIG. 11B) and the evaluation results of thenormalized integrated values of the temperature history (FIG. 11C). Theintegrated value of the temperature history has been evaluated under thesame condition in the rotational speed of the top ring 1 and therotational speed of the polishing table 2 as in the case where theintegrated value of the temperature history shown in FIG. 10C has beendetermined.

In FIGS. 11A, 11B and 11C, “Ref without Slider”, “New Type 0 mm”, “NewType 50 mm” and “New Type 100 mm” have been described above withreference to FIG. 9. Further, FIG. 11A is the same graph as FIG. 8A.

As is clear from FIG. 11A, in the central area of the substrate, thereis a considerable variation in the polishing rate between the cases of“New Type 0 mm”, “New Type 50 mm” and “New Type 100 mm”. It is thereforeconceivable that the polishing profile of the substrate and thetemperature of the substrate have a correlation. The distribution of thepolishing rate in the case of “New Type 50 mm” is closest to that in thecase of “Ref without Slider”, and the polishing profile becomes flatterin the case of “New Type 50 mm”. On the other hand, the polishing ratein the central area of the substrate is the highest in the case of “NewType 0 mm”.

FIG. 11B shows the integrated value of the temperature history at aradial position on the substrate. As can be seen in FIG. 11B, theintegrated value of the temperature history is large in the case of “NewType 0 mm” in an area around the center of the substrate, and large inthe case of “New Type 50 mm” in an area with the radius R ranging fromabout 50 mm to 80 mm, and then large in the case of “New Type 100 mm” inan area with the radius R of not less than about 80 mm. FIG. 11C showsdata obtained by normalizing the data of FIG. 11B.

As is clear from the normalized data in FIG. 11C, it is understood thatthe profile in the case of using “New Type 50 mm” is closest to theprofile in the case of “Ref without Slider”. From the viewpoint ofincreasing the polishing rate, it is preferred to employ “New Type 0 mm”which makes the temperature of the central portion of the substratehigher. Thus, it is considered that the temperature of the radiallyouter area of the substrate should be further increased while keepingthe installation position of the pad contact member at “New Type 0 mm”.

FIGS. 12A and 12B are comparative views showing the pad contact member11 shown in FIGS. 6A and 6B according to the above-described embodimentand a pad contact member 11 according to another embodiment. FIG. 12A isa plan view showing the pad contact member 11 shown in FIGS. 6A and 6B,the polishing pad 3 and the substrate (wafer) W to be polished, and FIG.12B is a plan view showing the pad contact member 11 according toanother embodiment, the polishing pad 3 and the substrate (wafer) W tobe polished.

While the pad contact member 11 shown in FIG. 12A has a planar shape ofa generally trapezoidal shape, the pad contact member 11 shown in FIG.12B has a planar shape of a generally hexagonal shape. Specifically, thepad contact member 11 shown in FIG. 12B has an upper side 11 a, a lowerside 11 b, and right and left sides 11 s, 11 s. The right and left sides11 s, 11 s have first sides 11 s 1, 11 s 1 extending approximatelyorthogonally to the upper side 11 a from their ends toward the outercircumferential side of the polishing pad 3, and second sides 11 s 2, 11s 2 which are bent inward from the ends of the first sides 11 s 1, 11 s1. Therefore, the pad contact member 11 has a planar shape of agenerally hexagonal shape. Further, as with the pad contact member 11shown in FIG. 11A, both end portions of the upper surface 11 a of thepad contact member 11 are inclined with respect to the central portionand form inclined sides 11 al, 11 ar. Thus, the planar shape of the padcontact member 11 should be called a deformed octagonal shape.

As is clear from FIGS. 12A and 12B, the pad contact member 11 shown inFIG. 12B has such a shape that a rectangular portion, surrounded by thefirst sides 11 s 1, 11 s 1 and two lines connecting the correspondingends of the first sides 11 s 1, 11 s 1, is added to the pad contactmember 11 shown in FIG. 12A. Specifically, the pad contact member 11shown in FIG. 12B has an increased heating area so that an outercircumferential portion of the polishing pad 3 can also be heated.

FIGS. 13A, 13B and 13C are perspective views each showing theconstruction of a flow passage formed in the pad contact member 11 shownin FIG. 12B.

In the pad contact member 11 shown in FIG. 13A, a plurality ofpartitions 14 provided therein extend laterally, and one ends of thepartitions 14 are connected to an outer frame. These partitions 14 forma single multi-folded zigzag flow passage. The liquid flows into the padcontact member 11 from an inflow port (IN), and flows through the zigzagflow passage and flows out from a discharge port (OUT).

In the pad contact member 11 shown in FIG. 13B, a plurality ofpartitions 14 provided therein extend vertically, and one ends of thepartitions 14 are connected to an outer frame. These partitions 14 forma single multi-folded zigzag flow passage. The liquid flows into the padcontact member 11 from an inflow port (IN), and flows through the zigzagflow passage and flows out from a discharge port (OUT).

In the pad contact member 11 shown in FIG. 13C, a laterally-extendingfirst partition 14A is provided in the interior, and the both ends ofthe first partition 14A are connected to an outer frame. Thus, theinterior of the pad contact member 11 is divided by the first partition14A into two upper and lower spaces (areas). A plurality ofvertically-extending second partitions 14B are provided in each of theupper and lower spaces. Each of the second partitions 14B, at its oneend, is connected to the outer frame or to the first partition 14A.Therefore, a single multi-folded zigzag flow passage is formed by theplural partitions 14B in each of the upper and lower spaces. The liquidflows into the pad contact member 11 from two inflow ports (IN) formedin the upper and lower spaces, and flows through the two parallel zigzagflow passages and flows out from two discharge ports (OUT).

FIG. 14A is a view showing the case where the evaluation results of theintegrated value of the temperature history in the case of using the padcontact member 11 according to another embodiment shown in FIG. 12B isadded to the evaluation results of the integrated value of thetemperature history shown in FIG. 11B. In FIG. 14A, the data of “NewType 0 mm+100 mm” correspond to the estimated integrated value of thetemperature history which can be expected to be obtained by using thepad contact member 11 shown in FIG. 12B. Since the pad contact member 11shown in FIG. 12B can be thought to be approximated by the combinationof the “New Type 0 mm” and the “New Type 100 mm” shown in FIG. 9, thedata of “New Type 0 mm+100 mm” are shown as the estimated temperaturehistory in FIG. 14A.

FIG. 14B shows data obtained by normalizing the data of FIG. 14A. As isclear from the normalized data shown in FIG. 14B, it is understood that,as with the case of “New Type 50 mm”, the profile of the normalizedintegrated value of the temperature history in the case of using “NewType 0 mm+100 mm” can be approximated by the profile of the normalizedintegrated value of the temperature history in the case of “Ref withoutSlider”.

The evaluation results of temperature in the case where the surface ofthe polishing pad 3 is heated by using the pad contact member 11according to another embodiment shown in FIGS. 13A, 13B and 13C and bychanging the flow rate of the liquid (heated water) supplied to the padcontact members 11 will be described with reference to FIGS. 15A, 15Band 15C.

The pad contact member 11 is placed on the polishing pad 3 such that themidpoint of the lower side 11 b of the pad contact member 11 accordswith a circle (radius: 290 mm) on the polishing pad.

FIG. 15A shows the relationship between a radial position on thesubstrate and the integrated value of the temperature historyexperienced by the substance surface in the case of using the variouspad contact members.

Of the pad contact members 11 according to other embodiments, the caseof using the pad contact member shown in FIG. 13A is herein referred toas “Lateral Flow”, the case of using the pad contact member shown inFIG. 13B is herein referred to as “Vertical Flow”, and the case of usingthe pad contact member shown in FIG. 13C is divided into three types andherein referred to as “Center Only”, “Edge Only” or “Both”. “CenterOnly” indicates the case where heated water is allowed to flow only inthe flow passage formed in the space, located on the center side of thepolishing pad, of the two spaces divided by the first partition 14A.“Edge Only” indicates the case where heated water is allowed to flowonly in the flow passage formed in the space, located on the outercircumferential side of the polishing pad, of the two spaces divided bythe first partition 14A. “Both” indicates the case where heated water isallowed to flow in both of the two spaces divided by the first partition14A. Further, “New Type 0 mm” is shown, and “New Type 0 mm” indicatesthe case where the pad contact member having the shape described inFIGS. 6A, 6B and 6C is placed at the locations described in FIGS. 8Athrough 8E. In either case, heated water is supplied to the pad contactmember at a flow rate of 5.0 liters/min.

As is clear from FIG. 15A, the integrated value of the pad temperaturehistory can be controlled by changing the area, to which heated water issupplied, of the pad contact member. Further, it is considered that theintegrated value of the temperature history can be finely controlled bychanging the flow rate of heated water supplied to the pad contactmember. The data shown in FIG. 15A correspond to data in the case wherepolishing of the substrate was not performed. However, it is conceivablethat also in the case of performing polishing of the substrate, theintegrated value of the temperature history can be controlled bychanging the area, to which heated water is supplied, of the pad contactmember, and thus the polishing profile can be controlled.

FIG. 15B shows the temperature of the polishing pad at a radial positionon the polishing pad in the cases of “Both”, “Center Only” and “EdgeOnly”. As is clear from FIG. 15B, in the case of “Edge Only”, thetemperature of the polishing pad starts to increase from the radialposition on the polishing pad of about 150 mm or thereabout, and becomesthe maximum at the radial position of about 250 mm or thereabout. In thecase of “Center Only”, the temperature of the polishing pad starts toincrease when the radial position on the polishing pad reaches about 80mm, and becomes the maximum from about 150 mm or thereabout, and thendecreases when the radial position on the polishing pad reaches about200 mm. In the case of “Both”, the profile is represented by a curvedline having a combination of the features of the profiles in the casesof “Center Only” and “Edge Only”, and thus steady high temperature stateof the polishing pad continues over a wide range of radial position onthe polishing pad.

FIG. 15C shows the temperature of the polishing pad at a radial positionon the polishing pad in the cases of “Both”, “Lateral Flow” and“Vertical Flow”. As is clear from FIG. 15C, in all the cases, thetemperatures of the polishing pad show temperature change curves similarto each other. However, the temperature of the polishing pad is slightlyhigher in the case of “Both” than in the cases of “Lateral Flow” and“Vertical Flow” in a radial position range of not less than 170 mm.Although heated water is supplied into the entire interior space of thepad contact member in the cases of “Lateral Flow” and “Vertical Flow”,the temperature of the polishing pad can be adjusted by changing theinstallation location of the pad contact member on the polishing pad.

The data shown in FIGS. 15A, 15B and 15C were obtained by supplyingheated water to the pad contact members at a flow rate of 5 liters/min.The temperature of the polishing pad can be adjusted by supplying heatedwater into the two spaces, divided by the first partition 14A, atdifferent flow rates. Further, the temperature of the polishing pad canbe adjusted by changing the temperature of the flowing liquid.

In the above-described embodiments, the temperature distribution in theradial direction of polishing pad is made close to that in the case ofnot using a pad contact member by using the pad contact member 11 havinga deformed hexagonal shape (FIGS. 6A and 6B) or the pad contact member11 having a deformed octagonal shape (FIGS. 13A, 13B and 13C), or bychanging the flow passage for liquid (heated water). However, an idealtemperature distribution in the radial direction of the polishing padvaries depending on the polishing process. Therefore, it is desirablethat the pad contact member 11 shown in FIGS. 6A and 6B and the padcontact member 11 shown in FIGS. 13A, 13B and 13C are movable in theradial direction of the polishing pad so as to control the temperaturedistribution in the radial direction of the polishing pad.

FIG. 16 is a perspective view showing a pad temperature adjustmentmechanism 5 which has a mechanism for moving the pad contact member 11in the radial direction of the polishing pad. As shown in FIG. 16, anarm 54 for supporting the pad contact member 11 can be reciprocatedmanually in the radial direction of the polishing pad 3 as shown by thearrow. Thus, an area in the radial direction of the polishing pad 3 tobe heated by the pad contact member 11 can be appropriately selected,thereby controlling the temperature distribution in the radial directionof the polishing pad 3.

FIG. 17 is a perspective view showing a pad temperature adjustmentmechanism 5 which has an automated mechanism for reciprocating the padcontact member 11 in the radial direction of the polishing pad. As shownin FIG. 17, an arm 54 for supporting the pad contact member 11 can bereciprocated in the radial direction of the polishing pad 3 by a motor55. The motor 55 is controlled by a motor controller 56. A plurality ofthermographs or radiation thermometers 57 are disposed above thepolishing pad 3 so that the distribution of the surface temperature ofthe polishing pad 3 can be measured. The motor controller 56 and theradiation thermometers 57 are connected to a main controller 58. Withthe configuration shown in FIG. 17, by inputting the measurement resultof the radiation thermometers 57 into the main controller 58 andcontrolling the motor controller 56 by the main controller 58, themeasurement result of the surface temperature distribution in thepolishing pad 3 is fed back, so that the pad contact member 11 can bemoved so as to obtain a desired temperature distribution in the radialdirection of the polishing pad 3.

FIG. 18 is a view showing an embodiment in which the pad contact member11 is divided into a plurality of regions, i.e., an inner region and anouter region in the radial direction of the polishing pad 3, and aliquid (heated water) can be supplied individually to each of the innerand outer regions so as to control the temperature in the radialdirection of the polishing pad 3 for each of the corresponding inner andouter areas. The pad contact member 11 shown in FIG. 18 may have thesame construction as that shown in FIGS. 13A, 13B and 13C. As shown inFIG. 18, the pad contact member 11 comprises a pad contact portion 11Alocated at an inner position in the radial direction of the polishingpad 3, and a pad contact portion 11B located at an outer position in theradial direction of the polishing pad 3. A liquid (heated water) can besupplied individually to each of the pad contact portions 11A, 11B.Specifically, the liquid (heated water) can be supplied from a liquidsupply tank 31 through supply lines 32A, 32B to the pad contact portions11A, 11B, respectively. Proportional control valves 61A, 61B areinstalled in the supply lines 32A, 32B, respectively, so that the flowrate of the liquid (heated water) to be supplied to each of the padcontact portions 11A, 11B can be controlled individually by theproportional control valves 61A, 61B. A plurality of thermographs orradiation thermometers 57 are disposed above the polishing pad 3 so thatthe distribution of the surface temperature of the polishing pad 3 canbe measured. The radiation thermometers 57 and the proportional controlvalves 61A, 61B are connected to a temperature controller 62. With theconfiguration shown in FIG. 18, the liquid (heated water) can besupplied individually at a controlled flow rate to each of the padcontact portions 11A, 11B located at an inner position and at an outerposition of the polishing pad 3, and thus the temperature in the radialdirection of the polishing pad 3 can be controlled for each of thecorresponding inner and outer areas. In FIG. 18, the pad contact member11 is divided into the two inner and outer regions in the radialdirection of the polishing pad 3. However, the pad contact member 11 maybe divided into three or more regions. As shown in FIG. 18, cold watercan also be supplied to the supply lines 32A, 32B. Although theproportional control valves 61A, 61B for changing the mixing ratiobetween heated water and cold water is shown in FIG. 18, it is possibleto employ a switching system configured to switch between heated waterand cold water by means of switching valves and adjust the flow rate bymeans of a flow rate regulating valve as shown in FIG. 2.

FIG. 19 is a view showing an embodiment in which a plurality of padcontact members 11, each comprised of a ceramic heater having a built-inheater, are arranged in the radial direction of the polishing pad 3 soas to control the temperature in the radial direction of the polishingpad 3 for each of the corresponding annular areas. As shown in FIG. 19,the plural pad contact members 11 comprising a ceramic heater arearranged side by side in the radial direction of the polishing pad 3.Electric power is supplied from a power-supply device 63 to each of thepad contact members 11. A plurality of thermographs or radiationthermometers 57 are disposed above the polishing pad 3 so that thedistribution of the surface temperature of the polishing pad 3 can bemeasured. The radiation thermometers 57 and the power source devices 63,63 are connected to a temperature controller 62. With the configurationshown in FIG. 19, by inputting the measurement results of the radiationthermometers 57 into the temperature controller 62 and controlling thepower-supply devices 63, 63 by the temperature controller 62, themeasurement result of the surface temperature distribution in thepolishing pad 3 is fed back, so that the pad contact members 11, 11,each comprised of a ceramic heater, can be controlled so as to obtain adesired temperature distribution in the radial direction of thepolishing pad 3.

The pad temperature adjustment mechanism 5 of the embodiment isconfigured to be capable of switchably supplying heated water and coldwater to the pad contact member 11, and thus the pad temperatureadjustment mechanism 5 is capable of not only heating but also coolingthe surface of the polishing pad 3.

FIG. 20A is a diagram showing a liquid supply system for selectivelysupplying heated water and cold water to the pad contact member 11. FIG.20A is a diagram showing the liquid supply system of FIG. 2 in asimplified manner. As shown in FIG. 20A, a valve V1 is installed in thesupply line 32 so that heated water can be supplied to the pad contactmember 11 via the valve V1. The heated water flowing in the supply line32 can be returned to the liquid supply tank 31 (see FIG. 2) via a valveV2 and thus can be circulated. A valve V3 is installed in the cold waterline 41 so that cold water can be supplied to the pad contact member 11via the valve V3. A valve V4 is installed in the return line 33 so thatthe heated water that has been supplied to the pad contact member 11 canbe returned to the liquid supply tank 31 (see FIG. 2) via the valve V4.The cold water flowing in the return line 33 can be discharged via avalve V5. As described above, the valve V1 is a heated water supplyvalve, the valve V2 is a heated water circulation valve, the valve V3 isa cold water supply valve, the valve V4 is a heated water return valve,and the valve V5 is a water discharge valve.

FIG. 20B is a diagram showing the states of the respective valves whenperforming switching from the supply of heated water to the supply ofcold water and switching from the supply of cold water to the supply ofheated water. As shown in FIG. 20B, when the liquid to be supplied tothe pad contact member 11 is switched from heated water to cold water,the valves are switched in the following manner: The valve V1 isswitched from “Open” to “Close”; the valve V2 is switched from “Close”to “Open” with a delay; the valve V3 is switched from “Close” to “Open”;the valve V4 is switched from “Open” to “Close” with a delay; and thevalve V5 is switched from “Close” to “Open” with a delay. When theliquid to be supplied to the pad contact member 11 is switched from coldwater to heated water, the valves are switched in the following manner:The valve V1 is switched from “Close” to “Open”; the valve V2 isswitched from “Open” to “Close”; the valve V3 is switched from “Open” to“Close”; the valve V4 is switched from “Close” to “Open” with a delay;and the valve V5 is switched from “Open” to “Close” with a delay. Inthis manner, the valves V1 to V5 are switched optionally with anappropriate delay. When switching from the supply of heated water to thesupply of cold water, the heated water remaining in the pad contactmember 11 and the piping is returned to the temperature regulator. Whenswitching from the supply of cold water to the supply of heated water,cold water remaining in the pad contact member 11 and the piping isdischarged to prevent a lowering of temperature of the heated water inthe temperature regulator.

A method for controlling switching between the supply of heated waterand the supply of cold water in order to control the surface temperatureof the polishing pad 3 at a preset temperature will now be describedwith reference to FIGS. 21A and 21B.

FIG. 21A is a view showing a change in the surface temperature of thepolishing pad 3. The horizontal axis represents time and the verticalaxis represents the surface temperature of the polishing pad 3. Presettemperatures Ts1 and Ts2 for the surface of the polishing pad 3 areshown on the vertical axis.

As shown in FIG. 21A, the supply of heated water is started when thecurrent temperature of the polishing pad 3 is lower than the presettemperature Ts2, i.e., when preset temperature>current temperature(start of step 1). Then, the supply of cold water is started when thecurrent temperature of the polishing pad 3 becomes higher than thepreset temperature Ts1, i.e., when preset temperature<currenttemperature (start of step 2).

FIG. 21B is an enlarged view of the portion A of FIG. 21A. As shown inFIG. 21B, an upper control limit and a lower control limit are set onthe preset temperature Ts1. When the current temperature of thepolishing pad 3 reaches the upper or lower control limit of the presettemperature Ts1, a valve switching signal is sent out. The CMPcontroller 50 (see FIG. 2) switches the valves for heated water or coldwater based on the state of the valve switching signal. The switching ofthe valves is performed in the manner described above with reference toFIGS. 20A and 20B.

Although the embodiments of the present invention have been describedherein, the present invention is not intended to be limited to theseembodiments. Therefore, it should be noted that the present inventionmay be applied to other various embodiments within a scope of thetechnical concept of the present invention.

What is claimed is:
 1. A method for determining a temperature adjustmentarea of a polishing pad, for use in a polishing method for polishing asubstrate by pressing the substrate against the polishing pad on apolishing table, comprising: a first step of defining a plurality ofconcentric annular areas in a radial direction of the polishing pad,selecting the area to adjust the surface temperature from the definedplural areas, adjusting the surface temperature of the selected area toa predetermined temperature, calculating, for each of radial positionson the substrate, an amount of heat that the substrate receives from thepolishing pad by contact with the temperature-adjusted polishing pad,calculating, for each of the radial positions on the substrate, anintegrated value of the amount of heat during rotation of the substratefrom the calculated amount of heat, thereby obtaining a profile of theintegrated value of the amount of heat in the radial direction of thesubstrate, and preparing and accumulating, for each area to adjust thesurface temperature, the profile of the integrated value of the amountof heat; a second step of obtaining a temperature profile in the radialdirection of the surface of the polishing pad when the substrate ispolished under such polishing conditions as to achieve a targetpolishing profile in a state where the surface temperature of thepolishing pad is not adjusted, and calculating, for each of radialpositions on the substrate, an integrated value of the amount of heatduring rotation of the substrate from the temperature profile, therebyobtaining a profile of the integrated value of the amount of heat in theradial direction of the substrate; and a third step of selecting aprofile which is equal or similar to a profile of the integrated valueof the amount of heat, obtained by normalizing the profile of theintegrated value of the amount of heat obtained in the second step, fromprofiles of the integrated value of the amount of heat, obtained bynormalizing the profiles of the integrated value of the amount of heataccumulated in the first step; wherein an area where the surfacetemperature of the polishing pad is adjusted is determined based on theprofile selected in the third step.
 2. The method for determining atemperature adjustment area of a polishing pad according to claim 1,wherein there are a plurality of areas where the surface temperature ofthe polishing pad is adjusted, and the plurality of areas havedifference temperatures from each other.
 3. A polishing method forpolishing a substrate by pressing the substrate against a polishing padon a polishing table, comprising: a first step of defining a pluralityof concentric annular areas in a radial direction of the polishing pad,selecting the area to adjust the surface temperature from the definedplural areas, adjusting the surface temperature of the selected area toa predetermined temperature, calculating, for each of radial positionson the substrate, an amount of heat that the substrate receives from thepolishing pad by contact with the temperature-adjusted polishing pad,calculating, for each of the radial positions on the substrate, anintegrated value of the amount of heat during rotation of the substratefrom the calculated amount of heat, thereby obtaining a profile of theintegrated value of the amount of heat in the radial direction of thesubstrate, and preparing and accumulating, for each area to adjust thesurface temperature, the profile of the integrated value of the amountof heat; a second step of obtaining a temperature profile in the radialdirection of the surface of the polishing pad when the substrate ispolished under such polishing conditions as to achieve a targetpolishing profile in a state where the surface temperature of thepolishing pad is not adjusted, and calculating, for each of radialpositions on the substrate, an integrated value of the amount of heatduring rotation of the substrate from the temperature profile, therebyobtaining a profile of the integrated value of the amount of heat in theradial direction of the substrate; a third step of selecting a profilewhich is equal or similar to a profile of the integrated value of theamount of heat, obtained by normalizing the profile of the integratedvalue of the amount of heat obtained in the second step, from profilesof the integrated value of the amount of heat, obtained by normalizingthe profiles of the integrated value of the amount of heat accumulatedin the first step; and a fourth step of determining an area where thesurface temperature of the polishing pad is adjusted based on theprofile selected in the third step, and polishing the substrate bypressing the substrate against the polishing pad while adjusting thesurface temperature of the determined area of the polishing pad.
 4. Thepolishing method according to claim 3, wherein there are a plurality ofareas where the surface temperature of the polishing pad is adjusted,and the plurality of areas have difference temperatures from each other.5. The polishing method according to claim 3, wherein the temperatureprofile in the radial direction of the surface of the polishing pad isprepared during the polishing of the substrate.
 6. The polishing methodaccording to claim 5, wherein the temperature profile in the radialdirection of the surface of the polishing pad is a temperaturedistribution in the radial direction of the surface of the polishingpad.
 7. The polishing method according to claim 5, wherein the rate oftemperature change of the temperature profile in the radial direction ofthe surface of the polishing pad is calculated for each of temperaturemeasurement points on the polishing pad.
 8. The polishing methodaccording to claim 7, wherein the area of the polishing pad whosesurface temperature is adjusted is variable depending on the rate oftemperature change during the polishing of the substrate.
 9. Thepolishing method according to claim 3, wherein the temperaturemeasurement of the polishing pad is performed by a thermograph or aradiation thermometer.